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May 15, 20222 min read

Netsupport Manager V12 Keygen 24 Otifide







References Category:Remote administration software Category:Remote desktop1. Field of the Invention The present invention relates to a flash memory device, and more particularly, to a flash memory device and method for performing a block merge operation using a partial programming operation to improve an erase operation. 2. Discussion of the Related Art A flash memory device is a nonvolatile memory device. The flash memory device is used in a variety of memory products, for example, a digital still camera, a mobile phone, a MP3 player, and a memory card. The size of a memory cell in a flash memory device is very small. Accordingly, when the size of the memory cell is reduced, the size of a transistor included in the flash memory device may also be reduced. Therefore, the read speed of the flash memory device may be relatively fast, and data programming, data erasing, and the like, may be performed more quickly. FIG. 1 is a diagram showing a flash memory device, such as a NAND flash memory device, for example, which is a nonvolatile memory device. Referring to FIG. 1, the flash memory device includes a memory cell array 1, a row decoder 2, and a page buffer 3. The memory cell array 1 includes a plurality of blocks BLK1 to BLK5. The row decoder 2 selects word lines of the memory cell array 1 in response to a page enable signal. The page buffer 3 stores data to be programmed in the memory cell array 1 or data read from the memory cell array 1. FIG. 2 is a diagram showing a portion of a memory cell array. Referring to FIG. 2, each of blocks BLK0 to BLK3 includes a plurality of word lines WL. Each of blocks BLK0 to BLK3 includes a plurality of memory cells MC. Each of the memory cells MC is formed at a crossing between a word line WL and a bit line BL. In a programming operation, the memory cell MC is programmed by a channel hot electron injection method. In the channel hot electron injection method, a program voltage Vpgm is applied to a selected word line WL, and a program voltage Vpass is applied to a selected bit line BL. For example, the program voltage Vpgm is applied to a selected word line WL in order to program the memory cell MC. The program voltage Vpass is applied to a selected bit line BL in order to program the ac619d1d87


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